Host: Defect: ID: DOI:

Si

P

qdg-648

Defect Details

Defect Type: Substitution

Charge: -1

Point Group: Td

Charge Stability Range: 0.127

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.1833

Transition Dipole Moment (D): 32.2085

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
-1/0 1.0794
-1/-2 1.2505