Host: Defect: ID: DOI:

Si

Os

qdg-526

Defect Details

Defect Type: Substitution

Charge: 1

Point Group: Td

Charge Stability Range: 0.093

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.4541

Transition Dipole Moment (D): 3.3419

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
1/2 0.1554
1/0 0.281