Host: Defect: ID: DOI:

Si

I

qdg-5875

Defect Details

Defect Type: Substitution

Charge: 2

Point Group: Td

Charge Stability Range: 0.16

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.7121

Transition Dipole Moment (D): 3.5714

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
2/3 -0.0254
2/1 0.2151