Host: Defect: ID: DOI:

Si

Cs

qdg-965

Defect Details

Defect Type: Substitution

Charge: 0

Point Group: Td

Charge Stability Range: 0.704

Spin Multiplicity: 4

Optical Properties

Excitation energy ΔKS (eV): 0.7016

Transition Dipole Moment (D): 5.1369

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
-1/0 0.9489