Host: Defect: ID: DOI:

Si

Cs

qdg-396

Defect Details

Defect Type: Substitution

Charge: -2

Point Group: Td

Charge Stability Range: 0.089

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.4908

Transition Dipole Moment (D): 14.3919

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
-1/-2 0.9982
-2/-3 1.1176