Host: Defect: ID: DOI:

Si

Cl

qdg-5855

Defect Details

Defect Type: Substitution

Charge: 2

Point Group: Td

Charge Stability Range: 0.096

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.3748

Transition Dipole Moment (D): 388.6752

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
2/3 0.0098
2/1 0.1392