Host: Defect: ID: DOI:

Si

Bi

qdg-653

Defect Details

Defect Type: Substitution

Charge: -1

Point Group: Td

Charge Stability Range: 0.179

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.2776

Transition Dipole Moment (D): 20.4306

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
0/-1 0.9964
-1/-2 1.2382