Host: Defect: ID: DOI:

Si

Ta

qdg-5648

Defect Details

Defect Type: Interstitial

Charge: 2

Point Group: Cs

Charge Stability Range: 0.276

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.2229

Transition Dipole Moment (D): 4.421

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
2/3 0.054
2/0 0.4258