Host: Defect: ID: DOI:

Si

Ta

qdg-816

Defect Details

Defect Type: Interstitial

Charge: -1

Point Group: Td

Charge Stability Range: 0.482

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.6811

Transition Dipole Moment (D): 6.4511

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
0/-1 0.6981