Host: Defect: ID: DOI:

Si

Os

qdg-867

Defect Details

Defect Type: Interstitial

Charge: -1

Point Group: Td

Charge Stability Range: 0.139

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.3221

Transition Dipole Moment (D):

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
-1/0 0.8879
-1/-2 1.0751