Host: Defect: ID: DOI:

Si

C

qdg-5967

Defect Details

Defect Type: Interstitial

Charge: 3

Point Group: C2v

Charge Stability Range: 0.041

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.1041

Transition Dipole Moment (D): 21.0015

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
3/4 0.3579
3/0 0.4125