Host: Defect: ID: DOI:

Si

C

qdg-5960

Defect Details

Defect Type: Interstitial

Charge: -2

Point Group: Cs

Charge Stability Range: 0.13

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.5689

Transition Dipole Moment (D): 9.0316

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
-2/-1 1.1379
-2/-3 1.3133