Host: Defect: ID: DOI:

Si

C

qdg-5959

Defect Details

Defect Type: Interstitial

Charge: 4

Point Group: C2v

Charge Stability Range: 0.266

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.1239

Transition Dipole Moment (D): 14.2634

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
3/4 0.3579