Host: Defect: ID: DOI:

Si

C

qdg-5956

Defect Details

Defect Type: Interstitial

Charge: 1

Point Group: C2v

Charge Stability Range: 0.013

Spin Multiplicity: 2

Optical Properties

Excitation energy ΔKS (eV): 0.2162

Transition Dipole Moment (D): 20.6166

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
1/3 0.407
1/0 0.4241