Host: Defect: ID: DOI:

Si

C

qdg-5955

Defect Details

Defect Type: Interstitial

Charge: 0

Point Group: C2v

Charge Stability Range: 0.263

Spin Multiplicity: 1

Optical Properties

Excitation energy ΔKS (eV): 0.8407

Transition Dipole Moment (D): 0.0227

Electronic Structure

Electronic Structure

Formation Energy

Formation Energy
Transition Charge Transition Level
1/0 0.4241
-1/0 0.7787